на замовлення 2401 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 52.64 грн |
| 10+ | 44.7 грн |
| 100+ | 26.92 грн |
| 500+ | 22.56 грн |
| 1000+ | 19.12 грн |
| 2500+ | 17.01 грн |
| 5000+ | 16.94 грн |
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Технічний опис DMN3033LSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 6.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.9A, Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Інші пропозиції DMN3033LSD-13
| Фото | Назва | Виробник | Інформація |
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DMN3033LSD-13 | Виробник : Diodes Inc |
 Trans MOSFET N-CH 30V 6.9A 8-Pin SOP T/R |
товар відсутній |
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DMN3033LSD-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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DMN3033LSD-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.9A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
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DMN3033LSD-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 30V 6.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
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DMN3033LSD-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 30A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |