DMN3023L-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
Description: MOSFET N-CH 30V 6.2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10000+ | 6.14 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN3023L-13 Diodes Incorporated
Description: MOSFET N-CH 30V 6.2A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V.
Інші пропозиції DMN3023L-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
DMN3023L-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R |
товар відсутній |
||
DMN3023L-13 | Виробник : Diodes Inc | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R |
товар відсутній |
||
DMN3023L-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23 Drain-source voltage: 30V Drain current: 4.9A On-state resistance: 68mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A Mounting: SMD Case: SOT23 кількість в упаковці: 10000 шт |
товар відсутній |
||
DMN3023L-13 | Виробник : Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A |
товар відсутній |
||
DMN3023L-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23 Drain-source voltage: 30V Drain current: 4.9A On-state resistance: 68mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A Mounting: SMD Case: SOT23 |
товар відсутній |