DMN3021LFDF-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 9.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W
Mounting: SMD
Power dissipation: 1.3W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Case: U-DFN2020-6
Drain-source voltage: 30V
Drain current: 9.4A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 10000 шт
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Технічний опис DMN3021LFDF-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W, Mounting: SMD, Power dissipation: 1.3W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 14nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 50A, Case: U-DFN2020-6, Drain-source voltage: 30V, Drain current: 9.4A, On-state resistance: 20mΩ, Type of transistor: N-MOSFET, кількість в упаковці: 10000 шт.
Інші пропозиції DMN3021LFDF-13
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DMN3021LFDF-13 | Виробник : Diodes Incorporated |
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товар відсутній |
|
DMN3021LFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W Mounting: SMD Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 9.4A On-state resistance: 20mΩ Type of transistor: N-MOSFET |
товар відсутній |