DMN3008SFG-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 30V 17.6A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V
на замовлення 1409 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.42 грн |
| 10+ | 41.95 грн |
| 100+ | 32.18 грн |
| 500+ | 23.87 грн |
| 1000+ | 19.1 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN3008SFG-7 Diodes Incorporated
Description: MOSFET N-CH 30V 17.6A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V.
Інші пропозиції DMN3008SFG-7 за ціною від 16.45 грн до 51.09 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN3008SFG-7 | Виробник : Diodes Incorporated |
MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A |
на замовлення 2614 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
DMN3008SFG-7 | Виробник : Diodes Inc |
Trans MOSFET N-CH 30V 17.6A 8-Pin PowerDI EP T/R |
товар відсутній |
|||||||||||||||||
| DMN3008SFG-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W Drain-source voltage: 30V Drain current: 18.4A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 86nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Mounting: SMD Case: PowerDI3333-8 кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
|
|
DMN3008SFG-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 17.6A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3690 pF @ 10 V |
товар відсутній |
|||||||||||||||||
| DMN3008SFG-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18.4A; Idm: 150A; 1.3W Drain-source voltage: 30V Drain current: 18.4A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 86nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Mounting: SMD Case: PowerDI3333-8 |
товар відсутній |