DMN24H3D5L-7 Diodes Incorporated
на замовлення 141429 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.89 грн |
| 100+ | 16.38 грн |
| 500+ | 13.64 грн |
| 1000+ | 12.02 грн |
| 3000+ | 10.68 грн |
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Технічний опис DMN24H3D5L-7 Diodes Incorporated
Description: MOSFET N-CH 240V 480MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 300mA, 10V, Power Dissipation (Max): 760mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 240 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 25 V.
Інші пропозиції DMN24H3D5L-7 за ціною від 14.86 грн до 42.58 грн
| Фото | Назва | Виробник | Інформація |
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DMN24H3D5L-7 | Виробник : Diodes Incorporated |
 Description: MOSFET N-CH 240V 480MA SOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 300mA, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 25 V |
на замовлення 7257 шт: термін постачання 21-31 дні (днів) |
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DMN24H3D5L-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 390mA; Idm: 1.9A; 1.26W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape On-state resistance: 6Ω Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 6.6nC Drain current: 0.39A Drain-source voltage: 240V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.9A Power dissipation: 1.26W кількість в упаковці: 1 шт |
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DMN24H3D5L-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 240V 480MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 480mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 300mA, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 25 V |
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DMN24H3D5L-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 390mA; Idm: 1.9A; 1.26W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape On-state resistance: 6Ω Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 6.6nC Drain current: 0.39A Drain-source voltage: 240V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.9A Power dissipation: 1.26W |
товар відсутній |