на замовлення 9829 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 45.02 грн |
| 10+ | 37.67 грн |
| 100+ | 22.84 грн |
| 500+ | 17.85 грн |
| 1000+ | 14.48 грн |
| 3000+ | 12.58 грн |
| 9000+ | 11.67 грн |
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Технічний опис DMN2044UCB4-7 Diodes Incorporated
Description: MOSFET N-CH 20V 3.3A U-WLB1010-4, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 720mW, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: U-WLB1010-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V.
Інші пропозиції DMN2044UCB4-7 за ціною від 14.23 грн до 41.82 грн
| Фото | Назва | Виробник | Інформація |
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| DMN2044UCB4-7 | Виробник : Diodes Incorporated |
 Description: MOSFET N-CH 20V 3.3A U-WLB1010-4Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 1.5A, 4.5V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V |
на замовлення 3028 шт: термін постачання 21-31 дні (днів) |
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| DMN2044UCB4-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 16A Drain-source voltage: 20V Drain current: 3.6A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 1.18W Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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| DMN2044UCB4-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 20V 3.3A U-WLB1010-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 1.5A, 4.5V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V |
товар відсутній |
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| DMN2044UCB4-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 16A; 1.18W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 16A Drain-source voltage: 20V Drain current: 3.6A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 1.18W Polarisation: unipolar |
товар відсутній |