Технічний опис DMN2041UVT-13 Diodes Inc
Description: MOSFET 2N-CH 20V 5.8A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V, Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: TSOT-26.
Інші пропозиції DMN2041UVT-13
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DMN2041UVT-13 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TSOT-26 |
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DMN2041UVT-13 | Виробник : Diodes Incorporated |
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товар відсутній |