Технічний опис DMN2027LK3-13 Diodes Inc
Description: MOSFET N-CH 20V 11.6A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V, Power Dissipation (Max): 2.14W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V.
Інші пропозиції DMN2027LK3-13
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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DMN2027LK3-13 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V Power Dissipation (Max): 2.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 857 pF @ 10 V |
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