Технічний опис DMN2008LFU-13 Diodes Inc
Description: MOSFET 2N-CH 20V 14.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 14.5A, Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V, Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.
Інші пропозиції DMN2008LFU-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMN2008LFU-13 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 11.5A; Idm: 75A; 1.7W Kind of package: reel; tape Drain current: 11.5A On-state resistance: 9.6mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 42.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 75A Mounting: SMD Case: U-DFN2030-6 Drain-source voltage: 20V кількість в упаковці: 3000 шт |
товар відсутній |
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DMN2008LFU-13 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active |
товар відсутній |
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DMN2008LFU-13 | Виробник : Diodes Incorporated |
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товар відсутній |
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DMN2008LFU-13 | Виробник : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 11.5A; Idm: 75A; 1.7W Kind of package: reel; tape Drain current: 11.5A On-state resistance: 9.6mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 42.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 75A Mounting: SMD Case: U-DFN2030-6 Drain-source voltage: 20V |
товар відсутній |