DMHC4035LSDQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N/2P-CH 40V 4.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V, 587pF @ 20V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 11.1nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
на замовлення 152500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 29.66 грн |
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Технічний опис DMHC4035LSDQ-13 Diodes Incorporated
Description: MOSFET 2N/2P-CH 40V 4.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V, 587pF @ 20V, Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 11.1nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMHC4035LSDQ-13 за ціною від 28.81 грн до 83.63 грн
| Фото | Назва | Виробник | Інформація |
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DMHC4035LSDQ-13 | Виробник : Diodes Zetex |
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Automotive AEC-Q101 |
на замовлення 112500 шт: термін постачання 21-31 дні (днів) |
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DMHC4035LSDQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N/2P-CH 40V 4.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 3.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 574pF @ 20V, 587pF @ 20V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V, 11.1nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
на замовлення 154769 шт: термін постачання 21-31 дні (днів) |
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DMHC4035LSDQ-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
на замовлення 21428 шт: термін постачання 21-30 дні (днів) |
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DMHC4035LSDQ-13 | Виробник : Diodes Zetex |
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Automotive AEC-Q101 |
товару немає в наявності |
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DMHC4035LSDQ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Application: automotive industry Type of transistor: N/P-MOSFET x2 Power dissipation: 1.5W Polarisation: unipolar Gate charge: 12.5/11.1nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40/-40V Drain current: 3.5/-2.9A On-state resistance: 58/100mΩ кількість в упаковці: 1 шт |
товару немає в наявності |
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DMHC4035LSDQ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 40/-40V; 3.5/-2.9A; 1.5W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape Application: automotive industry Type of transistor: N/P-MOSFET x2 Power dissipation: 1.5W Polarisation: unipolar Gate charge: 12.5/11.1nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40/-40V Drain current: 3.5/-2.9A On-state resistance: 58/100mΩ |
товару немає в наявності |