DMHC10H170SFJ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN
Packaging: Tape & Reel (TR)
Package / Case: 12-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: V-DFN5045-12
Part Status: Active
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 33.47 грн |
6000+ | 30.72 грн |
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Технічний опис DMHC10H170SFJ-13 Diodes Incorporated
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN, Packaging: Tape & Reel (TR), Package / Case: 12-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V, Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: V-DFN5045-12, Part Status: Active.
Інші пропозиції DMHC10H170SFJ-13 за ціною від 32.77 грн до 93.56 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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DMHC10H170SFJ-13 | Виробник : Diodes Incorporated |
Description: MOSFET 2N/2P-CH 100V 2.9A 12VDFN Packaging: Cut Tape (CT) Package / Case: 12-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN5045-12 Part Status: Active |
на замовлення 49465 шт: термін постачання 21-31 дні (днів) |
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DMHC10H170SFJ-13 | Виробник : Diodes Incorporated | MOSFETs 100V Comp Enh FET 20Vgs w/ H-Bridge |
на замовлення 3257 шт: термін постачання 21-30 дні (днів) |
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DMHC10H170SFJ-13 | Виробник : Diodes Zetex | Trans MOSFET N/P-CH 100V 2.9A/2.3A 12-Pin VDFN EP T/R |
на замовлення 279000 шт: термін постачання 21-31 дні (днів) |
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DMHC10H170SFJ-13 | Виробник : Diodes Inc | Trans MOSFET N/P-CH 100V 2.9A/2.3A 12-Pin VDFN EP T/R |
товару немає в наявності |
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DMHC10H170SFJ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2.3/-1.9A; 2.1W Case: V-DFN5045-12 Mounting: SMD Kind of package: reel; tape Drain current: 2.3/-1.9A On-state resistance: 200/300mΩ Type of transistor: N/P-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 9.7/17.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 13...-11A Drain-source voltage: 100/-100V кількість в упаковці: 3000 шт |
товару немає в наявності |
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DMHC10H170SFJ-13 | Виробник : Diodes Zetex | Trans MOSFET N/P-CH 100V 2.9A/2.3A 12-Pin VDFN EP T/R |
товару немає в наявності |
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DMHC10H170SFJ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2.3/-1.9A; 2.1W Case: V-DFN5045-12 Mounting: SMD Kind of package: reel; tape Drain current: 2.3/-1.9A On-state resistance: 200/300mΩ Type of transistor: N/P-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 9.7/17.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 13...-11A Drain-source voltage: 100/-100V |
товару немає в наявності |