Технічний опис DMG3415UFY4-7 Diodes Incorporated
Description: MOSFET P-CH 16V 2.5A DFN2015H4-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN2015H4-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 16 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 281.9 pF @ 10 V.
Інші пропозиції DMG3415UFY4-7
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMG3415UFY4-7 | Виробник : Diodes Inc | Trans MOSFET P-CH 16V 2.5A 3-Pin DFN T/R |
товару немає в наявності |
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DMG3415UFY4-7 | Виробник : Diodes Zetex | Trans MOSFET P-CH 16V 2.5A 3-Pin DFN T/R |
товару немає в наявності |
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DMG3415UFY4-7 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 16V 2.5A DFN2015H4-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN2015H4-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 16 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 281.9 pF @ 10 V |
товару немає в наявності |