DMC4040SSDQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 40V 7.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 40V 7.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 17.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 23.5 грн |
5000+ | 21.56 грн |
12500+ | 21.15 грн |
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Технічний опис DMC4040SSDQ-13 Diodes Incorporated
Description: DIODES INC. - DMC4040SSDQ-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 6.8 A, 6.8 A, 0.013 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 6.8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 40V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 6.8A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.013ohm, Verlustleistung, p-Kanal: 1.8W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.013ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 1.8W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Інші пропозиції DMC4040SSDQ-13 за ціною від 22.56 грн до 71.89 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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DMC4040SSDQ-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMC4040SSDQ-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 6.8 A, 6.8 A, 0.013 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6.8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.013ohm Verlustleistung, p-Kanal: 1.8W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.013ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.8W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
на замовлення 2479 шт: термін постачання 21-31 дні (днів) |
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DMC4040SSDQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET N/P-CH 40V 7.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 17.2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1790pF @ 20V Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17398 шт: термін постачання 21-31 дні (днів) |
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DMC4040SSDQ-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMC4040SSDQ-13 - Dual-MOSFET, Komplementärer n- und p-Kanal, 40 V, 40 V, 6.8 A, 6.8 A, 0.013 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 40V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6.8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.013ohm Verlustleistung, p-Kanal: 1.8W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.013ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 1.8W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
на замовлення 2479 шт: термін постачання 21-31 дні (днів) |
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DMC4040SSDQ-13 | Виробник : Diodes Inc | Trans MOSFET N/P-CH 40V 7.5A Automotive 8-Pin SO T/R |
товар відсутній |
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DMC4040SSDQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Polarisation: unipolar Kind of channel: enhanced Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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DMC4040SSDQ-13 | Виробник : Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40V |
товар відсутній |
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DMC4040SSDQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Mounting: SMD Kind of package: tape Polarisation: unipolar Kind of channel: enhanced Type of transistor: N-MOSFET |
товар відсутній |