Технічний опис DMC3061SVTQ-13 Diodes Inc
Description: MOSFET N/P-CH 30V 3.4A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 880mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA, Supplier Device Package: TSOT-26, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMC3061SVTQ-13
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DMC3061SVTQ-13 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 880mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, 287pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, 6.8nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.2V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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DMC3061SVTQ-13 | Виробник : Diodes Incorporated |
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товар відсутній |