DMC3028LSDX-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N/P-CH 30V 5.5A/5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 16.51 грн |
| 5000+ | 15.06 грн |
| 12500+ | 13.95 грн |
| 25000+ | 12.96 грн |
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Технічний опис DMC3028LSDX-13 Diodes Incorporated
Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A, Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V, Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Інші пропозиції DMC3028LSDX-13 за ціною від 13.83 грн до 47.48 грн
| Фото | Назва | Виробник | Інформація |
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DMC3028LSDX-13 | Виробник : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 5.5A/5.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 52395 шт: термін постачання 21-31 дні (днів) |
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DMC3028LSDX-13 | Виробник : Diodes Incorporated |
MOSFET 30V Dual FET 28mOHm 10V VGS 7.1A |
на замовлення 4334 шт: термін постачання 21-30 дні (днів) |
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DMC3028LSDX-13 | Виробник : Diodes Inc |
Trans MOSFET N/P-CH 30V 5.5A/5.8A 8-Pin SO T/R |
товар відсутній |
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DMC3028LSDX-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 30/-30V Drain current: 7.6/-7.2A On-state resistance: 0.027/0.025Ω Type of transistor: N/P-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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DMC3028LSDX-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Mounting: SMD Kind of package: reel; tape Power dissipation: 1.2W Polarisation: unipolar Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 30/-30V Drain current: 7.6/-7.2A On-state resistance: 0.027/0.025Ω Type of transistor: N/P-MOSFET |
товар відсутній |