DMC3026LSD-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.2A/8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V, 1241pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 8.2A/8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 8A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V, 1241pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 28mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 10.9nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 15.92 грн |
5000+ | 14.55 грн |
12500+ | 13.51 грн |
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Технічний опис DMC3026LSD-13 Diodes Incorporated
Description: MOSFET N/P-CH 30V 8.2A/8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V, 1241pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 28mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 10.9nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMC3026LSD-13 за ціною від 14.21 грн до 51.4 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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DMC3026LSD-13 | Виробник : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 8.2A/8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V, 1241pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V, 28mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, 10.9nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14335 шт: термін постачання 21-31 дні (днів) |
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DMC3026LSD-13 | Виробник : Diodes Incorporated | MOSFET 30V N & P Comp FET Enh 20Vgss Low Rdson |
на замовлення 1490 шт: термін постачання 21-30 дні (днів) |
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DMC3026LSD-13 | Виробник : Diodes Inc | Trans MOSFET N/P-CH 30V 6.5A/6.2A 8-Pin SO T/R |
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