DMC3025LSDQ-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N/P-CH 30V 6.5A/4.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2552500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 17.92 грн |
| 5000+ | 16.35 грн |
| 12500+ | 15.45 грн |
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Технічний опис DMC3025LSDQ-13 Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A/4.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V, Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMC3025LSDQ-13 за ціною від 16.94 грн до 51.4 грн
| Фото | Назва | Виробник | Інформація |
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DMC3025LSDQ-13 | Виробник : Diodes Zetex |
Trans MOSFET N/P-CH 30V 6.5A/4.2A Automotive AEC-Q101 8-Pin SO T/R |
на замовлення 2245000 шт: термін постачання 21-31 дні (днів) |
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DMC3025LSDQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6.5A/4.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2553699 шт: термін постачання 21-31 дні (днів) |
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DMC3025LSDQ-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
на замовлення 18841 шт: термін постачання 21-30 дні (днів) |
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DMC3025LSDQ-13 | Виробник : Diodes Inc |
Trans MOSFET N/P-CH 30V 6.5A/4.2A Automotive 8-Pin SO T/R |
товар відсутній |
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DMC3025LSDQ-13 | Виробник : Diodes Zetex |
Trans MOSFET N/P-CH 30V 6.5A/4.2A Automotive AEC-Q101 8-Pin SO T/R |
товар відсутній |
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DMC3025LSDQ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 9.8/10.5nC Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: 30/-30V Drain current: 5.1/-3.2A On-state resistance: 32/85mΩ Type of transistor: N/P-MOSFET Power dissipation: 0.77W кількість в упаковці: 1 шт |
товар відсутній |
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DMC3025LSDQ-13 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 9.8/10.5nC Kind of transistor: complementary pair Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 Drain-source voltage: 30/-30V Drain current: 5.1/-3.2A On-state resistance: 32/85mΩ Type of transistor: N/P-MOSFET Power dissipation: 0.77W |
товар відсутній |