Технічний опис DMC2057UVT-13 Diodes Inc
Description: MOSFET N/P-CH 20V 4A/3.3A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V, Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA, Supplier Device Package: TSOT-26, Part Status: Active.
Інші пропозиції DMC2057UVT-13
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DMC2057UVT-13 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active |
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DMC2057UVT-13 | Виробник : Diodes Incorporated |
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товар відсутній |