Технічний опис DMC2025UFDB-13 Diodes Inc
Description: MOSFET N/P-CH 20V 6A/3.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V, Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.
Інші пропозиції DMC2025UFDB-13
Фото | Назва | Виробник | Інформація |
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DMC2025UFDB-13 | Виробник : Diodes Zetex |
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товар відсутній |
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DMC2025UFDB-13 | Виробник : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
товар відсутній |
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DMC2025UFDB-13 | Виробник : Diodes Incorporated |
![]() |
товар відсутній |