Технічний опис DGTD65T60S2PT Diodes Inc
Description: IGBT 600V-X TO247 TUBE 0.45K, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 205 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A, Supplier Device Package: TO-247, IGBT Type: Field Stop, Td (on/off) @ 25°C: 42ns/142ns, Switching Energy: 920µJ (on), 530µJ (off), Test Condition: 400V, 60A, 7Ohm, 15V, Gate Charge: 95 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 180 A, Power - Max: 428 W.
Інші пропозиції DGTD65T60S2PT
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DGTD65T60S2PT | Виробник : Diodes Incorporated |
Description: IGBT 600V-X TO247 TUBE 0.45K Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 205 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Supplier Device Package: TO-247 IGBT Type: Field Stop Td (on/off) @ 25°C: 42ns/142ns Switching Energy: 920µJ (on), 530µJ (off) Test Condition: 400V, 60A, 7Ohm, 15V Gate Charge: 95 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 428 W |
товару немає в наявності |
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| DGTD65T60S2PT | Виробник : Diodes Incorporated |
 IGBT Transistors IGBT 600V-X TO247 TUBE 0.45K |
товару немає в наявності |