Технічний опис D3501N36TXPSA1 Infineon Technologies
Description: DIODE GEN PURP 4870A D12035K-1, Packaging: Tray, Package / Case: DO-200AE, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 4870A, Supplier Device Package: BG-D12035K-1, Operating Temperature - Junction: -40°C ~ 160°C, Current - Reverse Leakage @ Vr: 100 mA @ 4200 V.
Інші пропозиції D3501N36TXPSA1
| Фото | Назва | Виробник | Інформація |
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D3501N36TXPSA1 | Виробник : Infineon Technologies |
 Description: DIODE GEN PURP 4870A D12035K-1Packaging: Tray Package / Case: DO-200AE Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 4870A Supplier Device Package: BG-D12035K-1 Operating Temperature - Junction: -40°C ~ 160°C Current - Reverse Leakage @ Vr: 100 mA @ 4200 V |
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