CY7C1061GE18-15ZSXI Infineon Technologies


words_x_16_bit_static_ram_with_error_correcting_code_ecc.pdf Виробник: Infineon Technologies
SRAM Chip Async Single 1.8V 16M-bit 1M x 16 15ns 54-Pin TSOP-II Tray
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Технічний опис CY7C1061GE18-15ZSXI Infineon Technologies

Description: IC SRAM 16MBIT PAR 54TSOP II, Packaging: Tray, Package / Case: 54-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 16Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2.2V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 54-TSOP II, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 15 ns, Memory Organization: 1M x 16, DigiKey Programmable: Not Verified.

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CY7C1061GE18-15ZSXI CY7C1061GE18-15ZSXI Виробник : Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GE18-15ZSXI CY7C1061GE18-15ZSXI Виробник : Cypress Semiconductor Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ SRAM Async SRAMS
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