CSD86356Q5DT TEXAS INSTRUMENTS
Виробник: TEXAS INSTRUMENTS
Description: TEXAS INSTRUMENTS - CSD86356Q5DT - Dual-MOSFET, n-Kanal, 25 V, 25 V, 40 A, 40 A, 0.0018 ohm
tariffCode: 85412900
Dauer-Drainstrom Id, p-Kanal: 40
hazardous: false
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 25
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 40
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0018
Verlustleistung, p-Kanal: 12
Drain-Source-Spannung Vds, n-Kanal: 25
euEccn: NLR
Produktpalette: NexFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0018
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 12
SVHC: No SVHC (10-Jun-2022)
Description: TEXAS INSTRUMENTS - CSD86356Q5DT - Dual-MOSFET, n-Kanal, 25 V, 25 V, 40 A, 40 A, 0.0018 ohm
tariffCode: 85412900
Dauer-Drainstrom Id, p-Kanal: 40
hazardous: false
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 25
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 40
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0018
Verlustleistung, p-Kanal: 12
Drain-Source-Spannung Vds, n-Kanal: 25
euEccn: NLR
Produktpalette: NexFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0018
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 12
SVHC: No SVHC (10-Jun-2022)
на замовлення 474 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
100+ | 97.77 грн |
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Технічний опис CSD86356Q5DT TEXAS INSTRUMENTS
Description: TEXAS INSTRUMENTS - CSD86356Q5DT - Dual-MOSFET, n-Kanal, 25 V, 25 V, 40 A, 40 A, 0.0018 ohm, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 25, Dauer-Drainstrom Id: 40, Dauer-Drainstrom Id, p-Kanal: 40, hazardous: false, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 25, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 40, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0018, Verlustleistung Pd: 12, Gate-Source-Schwellenspannung, max.: 1.85, Verlustleistung, p-Kanal: 12, Drain-Source-Spannung Vds, n-Kanal: 25, euEccn: NLR, Bauform - Transistor: SON, Anzahl der Pins: 8, Produktpalette: NexFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0018, productTraceability: No, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 12, Betriebswiderstand, Rds(on): 0.0018, Rds(on)-Prüfspannung: 4.5, Betriebstemperatur, max.: 125, SVHC: No SVHC (10-Jun-2022).
Інші пропозиції CSD86356Q5DT за ціною від 97.77 грн до 135.62 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
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CSD86356Q5DT | Виробник : TEXAS INSTRUMENTS |
Description: TEXAS INSTRUMENTS - CSD86356Q5DT - Dual-MOSFET, n-Kanal, 25 V, 25 V, 40 A, 40 A, 0.0018 ohm tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 25 Dauer-Drainstrom Id: 40 Dauer-Drainstrom Id, p-Kanal: 40 hazardous: false Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 25 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 40 Drain-Source-Durchgangswiderstand, p-Kanal: 0.0018 Verlustleistung Pd: 12 Gate-Source-Schwellenspannung, max.: 1.85 Verlustleistung, p-Kanal: 12 Drain-Source-Spannung Vds, n-Kanal: 25 euEccn: NLR Bauform - Transistor: SON Anzahl der Pins: 8 Produktpalette: NexFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0018 productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 12 Betriebswiderstand, Rds(on): 0.0018 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 125 SVHC: No SVHC (10-Jun-2022) |
на замовлення 474 шт: термін постачання 21-31 дні (днів) |
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CSD86356Q5DT | Виробник : Texas Instruments |
Description: MOSFET 25V Packaging: Bulk |
на замовлення 7250 шт: термін постачання 21-31 дні (днів) |
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CSD86356Q5DT | Виробник : Texas Instruments | High Frequency Synchronous Power Module |
товар відсутній |
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CSD86356Q5DT | Виробник : Texas Instruments |
Description: MOSFET 2N-CH 25V 40A 8VSON-CLIP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 12W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V, 2510pF @ 12.5V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.85V @ 250µA, 1.5V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) |
товар відсутній |
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CSD86356Q5DT | Виробник : Texas Instruments |
Description: MOSFET 2N-CH 25V 40A 8VSON-CLIP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 12W (Ta) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12.5V, 2510pF @ 12.5V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.85V @ 250µA, 1.5V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) |
товар відсутній |
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CSD86356Q5DT | Виробник : Texas Instruments | MOSFET 25-V, N channel synchronous buck NexFET™ power MOSFET, SON 5 mm x 6 mm power block, 40 A 8-VSON-CLIP -55 to 150 |
товар відсутній |