![CSD85301Q2T CSD85301Q2T](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4847/296_6-WDFN%20Exposed%20Pad.jpg)
CSD85301Q2T Texas Instruments
![suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd85301q2](/images/adobe-acrobat.png)
Description: MOSFET 2N-CH 20V 5A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
FET Feature: Logic Level Gate, 5V Drive
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
250+ | 52.34 грн |
500+ | 43.13 грн |
Відгуки про товар
Написати відгук
Технічний опис CSD85301Q2T Texas Instruments
Description: MOSFET 2N-CH 20V 5A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.3W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V, Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V, FET Feature: Logic Level Gate, 5V Drive, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active.
Інші пропозиції CSD85301Q2T за ціною від 30.01 грн до 89.38 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
CSD85301Q2T | Виробник : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 469pF @ 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V FET Feature: Logic Level Gate, 5V Drive Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active |
на замовлення 1142 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CSD85301Q2T | Виробник : Texas Instruments |
![]() |
на замовлення 893 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
![]() |
CSD85301Q2T | Виробник : Texas Instruments |
![]() |
товар відсутній |
|||||||||||||||||
![]() |
CSD85301Q2T | Виробник : Texas Instruments |
![]() |
товар відсутній |
|||||||||||||||||
![]() |
CSD85301Q2T | Виробник : Texas Instruments |
![]() |
товар відсутній |
|||||||||||||||||
![]() |
CSD85301Q2T | Виробник : Texas Instruments |
![]() |
товар відсутній |
|||||||||||||||||
CSD85301Q2T | Виробник : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 26A; 2.3W; WSON6 Application: automotive industry Mounting: SMD Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 26A Case: WSON6 Drain-source voltage: 20V Drain current: 5A On-state resistance: 99mΩ Type of transistor: N-MOSFET x2 кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
CSD85301Q2T | Виробник : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 26A; 2.3W; WSON6 Application: automotive industry Mounting: SMD Power dissipation: 2.3W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 26A Case: WSON6 Drain-source voltage: 20V Drain current: 5A On-state resistance: 99mΩ Type of transistor: N-MOSFET x2 |
товар відсутній |