CSD75208W1015T Texas Instruments
Виробник: Texas InstrumentsDescription: MOSFET 2P-CH 20V 1.6A 6DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
Rds On (Max) @ Id, Vgs: 68mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
на замовлення 4750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 48.61 грн |
| 500+ | 40.06 грн |
| 1250+ | 32.63 грн |
| 2500+ | 28.83 грн |
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Технічний опис CSD75208W1015T Texas Instruments
Description: MOSFET 2P-CH 20V 1.6A 6DSBGA, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, DSBGA, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 750mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 1.6A, Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V, Rds On (Max) @ Id, Vgs: 68mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 6-DSBGA (1x1.5), Part Status: Active.
Інші пропозиції CSD75208W1015T за ціною від 28.33 грн до 84.46 грн
| Фото | Назва | Виробник | Інформація |
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CSD75208W1015T | Виробник : Texas Instruments |
Description: MOSFET 2P-CH 20V 1.6A 6DSBGA Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 750mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V Rds On (Max) @ Id, Vgs: 68mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active |
на замовлення 4972 шт: термін постачання 21-31 дні (днів) |
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CSD75208W1015T | Виробник : Texas Instruments |
MOSFETs 20V PCH NexFET Pwr MOSFET |
на замовлення 9704 шт: термін постачання 21-30 дні (днів) |
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CSD75208W1015T | Виробник : Texas Instruments |
Trans MOSFET P-CH 20V 1.6A 6-Pin DSBGA T/R |
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CSD75208W1015T | Виробник : Texas Instruments |
Trans MOSFET P-CH 20V 1.6A 6-Pin DSBGA T/R |
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CSD75208W1015T | Виробник : Texas Instruments |
Trans MOSFET P-CH 20V 1.6A 6-Pin DSBGA T/R |
товар відсутній |
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| CSD75208W1015T | Виробник : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.6A; Idm: -22A; 0.75W Type of transistor: P-MOSFET x2 Technology: NexFET™ Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Pulsed drain current: -22A Power dissipation: 0.75W Case: DSBGA6 Gate-source voltage: ±6V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common source Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
товар відсутній |
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| CSD75208W1015T | Виробник : TEXAS INSTRUMENTS |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.6A; Idm: -22A; 0.75W Type of transistor: P-MOSFET x2 Technology: NexFET™ Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Pulsed drain current: -22A Power dissipation: 0.75W Case: DSBGA6 Gate-source voltage: ±6V On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common source Features of semiconductor devices: ESD protected gate |
товар відсутній |