CSD23382F4T Texas Instruments
Виробник: Texas InstrumentsDescription: MOSFET P-CH 12V 3.5A 3PICOSTAR
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 3-PICOSTAR
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V
на замовлення 1604 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 802+ | 26.12 грн |
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Технічний опис CSD23382F4T Texas Instruments
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V.
Інші пропозиції CSD23382F4T за ціною від 21.81 грн до 44.64 грн
| Фото | Назва | Виробник | Інформація |
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CSD23382F4T | Виробник : Texas Instruments |
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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CSD23382F4T | Виробник : Texas Instruments |
Description: MOSFET P-CH 12V 3.5A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 76mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 6 V |
на замовлення 1718 шт: термін постачання 21-31 дні (днів) |
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CSD23382F4T | Виробник : Texas Instruments |
MOSFET P-Ch NexFET Power MOSFET |
на замовлення 5896 шт: термін постачання 21-30 дні (днів) |
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| CSD23382F4T | Виробник : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3.5A; Idm: -22A; 500mW Drain-source voltage: -12V Drain current: -3.5A On-state resistance: 0.199Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -22A Mounting: SMD Case: PICOSTAR3 кількість в упаковці: 1 шт |
товар відсутній |
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| CSD23382F4T | Виробник : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3.5A; Idm: -22A; 500mW Drain-source voltage: -12V Drain current: -3.5A On-state resistance: 0.199Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -22A Mounting: SMD Case: PICOSTAR3 |
товар відсутній |