CSD22205LT Texas Instruments
Виробник: Texas InstrumentsMOSFET -8V, P channel NexFET™ power MOSFET, single LGA 1.2 mm x 1.2 mm, 9.9 mOhm, gate ESD protection 4-PICOSTAR -55 to 150
на замовлення 4012 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 32.23 грн |
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Технічний опис CSD22205LT Texas Instruments
Description: MOSFET P-CH 8V 7.4A 4PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 4-XFLGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1.05V @ 250µA, Supplier Device Package: 4-PICOSTAR, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V.
Інші пропозиції CSD22205LT за ціною від 25.59 грн до 75.27 грн
| Фото | Назва | Виробник | Інформація |
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CSD22205LT | Виробник : Texas Instruments |
Description: MOSFET P-CH 8V 7.4A 4PICOSTAR Packaging: Tape & Reel (TR) Package / Case: 4-XFLGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 4-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V |
на замовлення 29750 шт: термін постачання 21-31 дні (днів) |
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CSD22205LT | Виробник : Texas Instruments |
Description: MOSFET P-CH 8V 7.4A 4PICOSTAR Packaging: Cut Tape (CT) Package / Case: 4-XFLGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.05V @ 250µA Supplier Device Package: 4-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 4 V |
на замовлення 30205 шт: термін постачання 21-31 дні (днів) |
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| CSD22205LT | Виробник : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -7.4A; Idm: -71A; 0.6W Mounting: SMD Case: PICOSTAR4 Kind of channel: enhanced Drain-source voltage: -8V Type of transistor: P-MOSFET Gate-source voltage: ±6V Kind of package: reel; tape On-state resistance: 40mΩ Pulsed drain current: -71A Power dissipation: 0.6W Polarisation: unipolar Technology: NexFET™ Drain current: -7.4A кількість в упаковці: 1 шт |
товар відсутній |
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| CSD22205LT | Виробник : TEXAS INSTRUMENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -7.4A; Idm: -71A; 0.6W Mounting: SMD Case: PICOSTAR4 Kind of channel: enhanced Drain-source voltage: -8V Type of transistor: P-MOSFET Gate-source voltage: ±6V Kind of package: reel; tape On-state resistance: 40mΩ Pulsed drain current: -71A Power dissipation: 0.6W Polarisation: unipolar Technology: NexFET™ Drain current: -7.4A |
товар відсутній |