BZT52B75-G RHG Taiwan Semiconductor Corporation


Виробник: Taiwan Semiconductor Corporation
Description: SOD-123, 410MW, 2%, SMALL SIGNAL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
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Технічний опис BZT52B75-G RHG Taiwan Semiconductor Corporation

Description: SOD-123, 410MW, 2%, SMALL SIGNAL, Packaging: Tape & Reel (TR), Tolerance: ±2%, Package / Case: SOD-123F, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Voltage - Zener (Nom) (Vz): 75 V, Impedance (Max) (Zzt): 255 Ohms, Supplier Device Package: SOD-123F, Power - Max: 410 mW, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA, Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V.

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BZT52B75-G RHG Виробник : Taiwan Semiconductor Corporation Description: SOD-123, 410MW, 2%, SMALL SIGNAL
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
товар відсутній