BYV30JT-600PQ WeEn Semiconductors
Виробник: WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3P
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3840 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 133.09 грн |
10+ | 106.19 грн |
480+ | 71.5 грн |
960+ | 56.93 грн |
2400+ | 54.09 грн |
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Технічний опис BYV30JT-600PQ WeEn Semiconductors
Description: DIODE GEN PURP 600V 30A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 65 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-3P, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Інші пропозиції BYV30JT-600PQ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BYV30JT-600PQ | Виробник : Ween | Ultrafast recovery diode |
товар відсутній |
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BYV30JT-600PQ | Виробник : WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 170A; SOT1293,TO3PF Mounting: THT Features of semiconductor devices: ultrafast switching Case: SOT1293; TO3PF Max. off-state voltage: 0.6kV Max. forward voltage: 0.96V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 170A Kind of package: tube Type of diode: rectifying кількість в упаковці: 2400 шт |
товар відсутній |
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BYV30JT-600PQ | Виробник : WeEn Semiconductors | Rectifiers BYV30JT-600PQ/TO3PF/STANDARD M |
товар відсутній |
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BYV30JT-600PQ | Виробник : WeEn Semiconductors |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 170A; SOT1293,TO3PF Mounting: THT Features of semiconductor devices: ultrafast switching Case: SOT1293; TO3PF Max. off-state voltage: 0.6kV Max. forward voltage: 0.96V Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 170A Kind of package: tube Type of diode: rectifying |
товар відсутній |