Технічний опис BYR5D-1200PJ Ween
Description: DIODE GEN PURP 1.2KV 5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 62 ns, Technology: Standard, Current - Average Rectified (Io): 5A, Supplier Device Package: DPAK, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Інші пропозиції BYR5D-1200PJ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BYR5D-1200PJ | Виробник : WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: ultrafast switching Max. forward impulse current: 55A Max. forward voltage: 1.55V Load current: 5A Type of diode: rectifying кількість в упаковці: 1 шт |
товар відсутній |
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BYR5D-1200PJ | Виробник : WeEn Semiconductors |
Description: DIODE GEN PURP 1.2KV 5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 62 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 5 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
товар відсутній |
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BYR5D-1200PJ | Виробник : WeEn Semiconductors | Rectifiers BYR5D-1200P/DPAK/REEL 13" Q1/T1 *STANDARD MARK SMD |
товар відсутній |
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BYR5D-1200PJ | Виробник : WeEn Semiconductors |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 5A; DPAK; Ufmax: 1.55V; Ifsm: 55A Case: DPAK Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 1.2kV Features of semiconductor devices: ultrafast switching Max. forward impulse current: 55A Max. forward voltage: 1.55V Load current: 5A Type of diode: rectifying |
товар відсутній |