![BYM13-20HE3/97 BYM13-20HE3/97](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/693/112%3BGL41%28DO-213AB%29%3B%3B2.jpg)
BYM13-20HE3/97 Vishay General Semiconductor - Diodes Division
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Description: DIODE SCHOTTKY 20V 1A GL41
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (GL41)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
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Технічний опис BYM13-20HE3/97 Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A GL41, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 110pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB (GL41), Operating Temperature - Junction: -55°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A, Current - Reverse Leakage @ Vr: 500 µA @ 20 V.
Інші пропозиції BYM13-20HE3/97
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BYM13-20HE3/97 | Виробник : Vishay General Semiconductor |
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