BYM11-100-E3/96 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 100V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 55500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 8.74 грн |
| 3000+ | 7.75 грн |
| 7500+ | 7.42 грн |
| 10500+ | 6.27 грн |
| 37500+ | 6.18 грн |
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Технічний опис BYM11-100-E3/96 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Інші пропозиції BYM11-100-E3/96 за ціною від 6.34 грн до 31.79 грн
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BYM11-100-E3/96 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 71780 шт: термін постачання 21-31 дні (днів) |
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BYM11-100-E3/96 | Виробник : Vishay General Semiconductor |
Rectifiers 1.0 Amp 100 Volt |
на замовлення 6470 шт: термін постачання 21-30 дні (днів) |
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BYM11-100-E3/96 | Виробник : Vishay |
Diode Switching 100V 1A 2-Pin DO-213AB T/R |
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BYM11-100-E3/96 | Виробник : Vishay |
Diode Switching 100V 1A 2-Pin DO-213AB T/R |
товар відсутній |
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BYM11-100-E3/96 | Виробник : Vishay |
Diode Switching 100V 1A 2-Pin DO-213AB T/R |
товар відсутній |
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| BYM11-100-E3/96 | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 150ns; DO213AB; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 15pF Case: DO213AB Max. forward voltage: 1.3V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape кількість в упаковці: 5 шт |
товар відсутній |
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| BYM11-100-E3/96 | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 150ns; DO213AB; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 15pF Case: DO213AB Max. forward voltage: 1.3V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
товар відсутній |