Технічний опис BYC30MX-650PQ Ween
Description: BYC30MX-650P/TO220F-2L/STANDARD, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 24 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-220F, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A, Current - Reverse Leakage @ Vr: 30 µA @ 650 V.
Інші пропозиції BYC30MX-650PQ
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BYC30MX-650PQ | Виробник : WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 30A Max. load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 270A Case: SOD113; TO220FP-2 Max. forward voltage: 2.75V Reverse recovery time: 20ns кількість в упаковці: 1 шт |
товар відсутній |
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BYC30MX-650PQ | Виробник : WeEn Semiconductors |
Description: BYC30MX-650P/TO220F-2L/STANDARD Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220F Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 650 V |
товар відсутній |
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BYC30MX-650PQ | Виробник : WeEn Semiconductors |
![]() |
товар відсутній |
|
BYC30MX-650PQ | Виробник : WeEn Semiconductors |
![]() Description: Diode: rectifying; THT; 650V; 30A; tube; Ifsm: 270A; Ufmax: 2.75V Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 30A Max. load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 270A Case: SOD113; TO220FP-2 Max. forward voltage: 2.75V Reverse recovery time: 20ns |
товар відсутній |