Технічний опис BY359-1500,127 NXP Semiconductors
Description: DIODE GEN PURP 1.5KV 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 600 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 1500 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 1300 V.
Інші пропозиції BY359-1500,127
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BY359-1500,127 | Виробник : NXP USA Inc. |
![]() Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 1300 V |
товар відсутній |
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BY359-1500,127 | Виробник : NXP Semiconductors |
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товар відсутній |