BXK9Q29-60EJ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: BXK9Q29-60A/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: MLPAK33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 30 V
Qualification: AEC-Q101
Description: BXK9Q29-60A/SOT8002/MLPAK33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: MLPAK33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 30 V
Qualification: AEC-Q101
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.65 грн |
| 14+ | 21.34 грн |
| 100+ | 12.79 грн |
| 500+ | 11.12 грн |
| 1000+ | 7.56 грн |
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Технічний опис BXK9Q29-60EJ Nexperia USA Inc.
Description: BXK9Q29-60A/SOT8002/MLPAK33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 5.6A, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: MLPAK33, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції BXK9Q29-60EJ
| Фото | Назва | Виробник | Інформація |
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BXK9Q29-60EJ | Виробник : Nexperia USA Inc. |
Description: BXK9Q29-60A/SOT8002/MLPAK33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.6A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: MLPAK33 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 30 V Qualification: AEC-Q101 |
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