BXE40T1K2HFSD BRIDGELUX
Виробник: BRIDGELUX
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 278W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 239nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 342ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 278W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 239nC
Kind of package: tube
Turn-on time: 110ns
Turn-off time: 342ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
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Технічний опис BXE40T1K2HFSD BRIDGELUX
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 40A; 278W; TO247-3, Type of transistor: IGBT, Collector-emitter voltage: 1.2kV, Collector current: 40A, Power dissipation: 278W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 160A, Mounting: THT, Gate charge: 239nC, Kind of package: tube, Turn-on time: 110ns, Turn-off time: 342ns, Features of semiconductor devices: integrated anti-parallel diode, кількість в упаковці: 1 шт.
Інші пропозиції BXE40T1K2HFSD
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BXE40T1K2HFSD | Виробник : BRIDGELUX |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 278W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 278W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 239nC Kind of package: tube Turn-on time: 110ns Turn-off time: 342ns Features of semiconductor devices: integrated anti-parallel diode |
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