BUK9M5R2-30EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V
Power Dissipation (Max): 79W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2467 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 70A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V
Power Dissipation (Max): 79W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2467 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1500+ | 32.02 грн |
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Технічний опис BUK9M5R2-30EX Nexperia USA Inc.
Description: MOSFET N-CH 30V 70A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Ta), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V, Power Dissipation (Max): 79W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2467 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK9M5R2-30EX за ціною від 24.34 грн до 111.28 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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BUK9M5R2-30EX | Виробник : Nexperia | MOSFET BUK9M5R2-30E/SOT1210/mLFPAK |
на замовлення 4360 шт: термін постачання 21-30 дні (днів) |
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BUK9M5R2-30EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 70A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 25A, 10V Power Dissipation (Max): 79W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2467 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2984 шт: термін постачання 21-31 дні (днів) |
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BUK9M5R2-30EX | Виробник : NXP |
2xN-MOSFET 30V 70A 5V,10V 79W AUTOMOTIVE BUK9M5R2-30EX TBUK9m5r2-30ex кількість в упаковці: 5 шт |
на замовлення 5 шт: термін постачання 28-31 дні (днів) |
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BUK9M5R2-30EX | Виробник : NEXPERIA | Trans MOSFET N-CH 30V 70A Automotive 8-Pin LFPAK EP T/R |
товару немає в наявності |
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BUK9M5R2-30EX | Виробник : Nexperia | Trans MOSFET N-CH 30V 70A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
товару немає в наявності |
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BUK9M5R2-30EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 63A; Idm: 358A; 79W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Power dissipation: 79W Application: automotive industry Polarisation: unipolar Gate charge: 22.5nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 358A Drain-source voltage: 30V Drain current: 63A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товару немає в наявності |
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BUK9M5R2-30EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 63A; Idm: 358A; 79W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Power dissipation: 79W Application: automotive industry Polarisation: unipolar Gate charge: 22.5nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 358A Drain-source voltage: 30V Drain current: 63A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET |
товару немає в наявності |