BUK98180-100A/CU115 NEXPERIA
Виробник: NEXPERIADescription: NEXPERIA - BUK98180-100A/CU115 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
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Технічний опис BUK98180-100A/CU115 NEXPERIA
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Part Status: Active, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V, Power Dissipation (Max): 8W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-223, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK98180-100A/CU115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BUK98180-100A/CU115 | Виробник : Nexperia USA Inc. |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V Power Dissipation (Max): 8W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-223 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V Qualification: AEC-Q101 |
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