BUK965R8-100E,118 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 5V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17460 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 151.16 грн |
| 1600+ | 124.64 грн |
| 2400+ | 117.36 грн |
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Технічний опис BUK965R8-100E,118 Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 5V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: D2PAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 17460 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK965R8-100E,118 за ціною від 115.69 грн до 271.56 грн
| Фото | Назва | Виробник | Інформація |
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BUK965R8-100E,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 5V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 17460 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2769 шт: термін постачання 21-31 дні (днів) |
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BUK965R8-100E,118 | Виробник : Nexperia |
MOSFET BUK965R8-100E/SOT404/D2PAK |
на замовлення 2260 шт: термін постачання 21-30 дні (днів) |
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BUK965R8-100E,118 | Виробник : NEXPERIA |
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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BUK965R8-100E,118 | Виробник : Nexperia |
Trans MOSFET N-CH 100V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| BUK965R8-100E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 591A; 349W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 105A Pulsed drain current: 591A Power dissipation: 349W Case: D2PAK; SOT404 Gate-source voltage: ±10V On-state resistance: 16mΩ Mounting: SMD Gate charge: 133nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 800 шт |
товар відсутній |
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| BUK965R8-100E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 591A; 349W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 105A Pulsed drain current: 591A Power dissipation: 349W Case: D2PAK; SOT404 Gate-source voltage: ±10V On-state resistance: 16mΩ Mounting: SMD Gate charge: 133nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |