BUK7S0R7-40HJ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 425A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 425A LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2000+ | 200.17 грн |
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Технічний опис BUK7S0R7-40HJ Nexperia USA Inc.
Description: NEXPERIA - BUK7S0R7-40HJ - Leistungs-MOSFET, n-Kanal, 40 V, 425 A, 620 µohm, LFPAK88, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 425A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, usEccn: EAR99, Verlustleistung Pd: 375W, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 375W, Bauform - Transistor: LFPAK88, Qualifizierungsstandard der Automobilindustrie: AEC-Q101, Anzahl der Pins: 4Pins, Produktpalette: -, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 620µohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 620µohm, SVHC: No SVHC (27-Jun-2024).
Інші пропозиції BUK7S0R7-40HJ за ціною від 178.71 грн до 465.29 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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BUK7S0R7-40HJ | Виробник : NEXPERIA |
Description: NEXPERIA - BUK7S0R7-40HJ - Leistungs-MOSFET, n-Kanal, 40 V, 425 A, 620 µohm, LFPAK88, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 425A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 375W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: LFPAK88 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 4Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 620µohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 620µohm SVHC: No SVHC (27-Jun-2024) |
на замовлення 1764 шт: термін постачання 21-31 дні (днів) |
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BUK7S0R7-40HJ | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 425A LFPAK88 Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 425A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 202 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15719 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5424 шт: термін постачання 21-31 дні (днів) |
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BUK7S0R7-40HJ | Виробник : NEXPERIA |
Description: NEXPERIA - BUK7S0R7-40HJ - Leistungs-MOSFET, n-Kanal, 40 V, 425 A, 620 µohm, LFPAK88, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 425A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: LFPAK88 Anzahl der Pins: 4Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 620µohm SVHC: No SVHC (27-Jun-2024) |
на замовлення 1764 шт: термін постачання 21-31 дні (днів) |
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BUK7S0R7-40HJ | Виробник : NEXPERIA | N-channel 40 V Standard level MOSFET |
товар відсутній |
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BUK7S0R7-40HJ | Виробник : NEXPERIA | N-channel 40 V Standard level MOSFET |
товар відсутній |
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BUK7S0R7-40HJ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 425A; Idm: 1983A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 425A Pulsed drain current: 1983A Power dissipation: 375W Case: LFPAK88; SOT1235 On-state resistance: 1.53mΩ Mounting: SMD Gate charge: 202nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 2000 шт |
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BUK7S0R7-40HJ | Виробник : Nexperia | MOSFET BUK7S0R7-40H/SOT1235/LFPAK88 |
товар відсутній |
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BUK7S0R7-40HJ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 425A; Idm: 1983A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 425A Pulsed drain current: 1983A Power dissipation: 375W Case: LFPAK88; SOT1235 On-state resistance: 1.53mΩ Mounting: SMD Gate charge: 202nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |