BUK7K45-100EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21.4A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21.4A
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V
Rds On (Max) @ Id, Vgs: 37.6mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: MOSFET 2N-CH 100V 21.4A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21.4A
Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V
Rds On (Max) @ Id, Vgs: 37.6mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1500+ | 40.02 грн |
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Технічний опис BUK7K45-100EX Nexperia USA Inc.
Description: NEXPERIA - BUK7K45-100EX - Dual-MOSFET, n-Kanal, 100 V, 100 V, 21.4 A, 21.4 A, 0.03 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 21.4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 100V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 21.4A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.03ohm, Verlustleistung, p-Kanal: 53W, Drain-Source-Spannung Vds, n-Kanal: 100V, euEccn: NLR, Bauform - Transistor: LFPAK56D, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.03ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 53W, Betriebstemperatur, max.: 175°C, SVHC: No SVHC (23-Jan-2024).
Інші пропозиції BUK7K45-100EX за ціною від 34.08 грн до 111.01 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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BUK7K45-100EX | Виробник : NEXPERIA |
Description: NEXPERIA - BUK7K45-100EX - Dual-MOSFET, n-Kanal, 100 V, 100 V, 21.4 A, 21.4 A, 0.03 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 21.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 21.4A Drain-Source-Durchgangswiderstand, p-Kanal: 0.03ohm Verlustleistung, p-Kanal: 53W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.03ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 53W Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) |
на замовлення 4066 шт: термін постачання 21-31 дні (днів) |
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BUK7K45-100EX | Виробник : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 21.4A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21.4A Input Capacitance (Ciss) (Max) @ Vds: 1533pF @ 25V Rds On (Max) @ Id, Vgs: 37.6mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 25.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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BUK7K45-100EX | Виробник : Nexperia | MOSFET BUK7K45-100E/SOT1205/LFPAK56D |
на замовлення 1164 шт: термін постачання 21-30 дні (днів) |
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BUK7K45-100EX | Виробник : NEXPERIA |
Description: NEXPERIA - BUK7K45-100EX - Dual-MOSFET, n-Kanal, 100 V, 100 V, 21.4 A, 21.4 A, 0.03 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 21.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 100V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 21.4A Drain-Source-Durchgangswiderstand, p-Kanal: 0.03ohm Verlustleistung, p-Kanal: 53W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.03ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 53W Betriebstemperatur, max.: 175°C SVHC: No SVHC (23-Jan-2024) |
на замовлення 4066 шт: термін постачання 21-31 дні (днів) |
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BUK7K45-100EX | Виробник : NEXPERIA | Trans MOSFET N-CH 100V 21.4A Automotive 8-Pin LFPAK-D T/R |
товар відсутній |
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BUK7K45-100EX | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 84A; 53W Drain-source voltage: 100V Drain current: 15A On-state resistance: 0.104Ω Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 53W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.9nC Kind of channel: enhanced Pulsed drain current: 84A Mounting: SMD Case: LFPAK56D; SOT1205 кількість в упаковці: 1 шт |
товар відсутній |
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BUK7K45-100EX | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 84A; 53W Drain-source voltage: 100V Drain current: 15A On-state resistance: 0.104Ω Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 53W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.9nC Kind of channel: enhanced Pulsed drain current: 84A Mounting: SMD Case: LFPAK56D; SOT1205 |
товар відсутній |