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BUK7880-55,135 NXP USA Inc.
Виробник: NXP USA Inc.Description: MOSFET N-CH 55V 3.5A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2110 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1268+ | 16.85 грн |
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Технічний опис BUK7880-55,135 NXP USA Inc.
Description: MOSFET N-CH 55V 3.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SC-73, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK7880-55,135
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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BUK7880-55,135 | Виробник : NXP USA Inc. |
Description: MOSFET N-CH 55V 3.5A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SC-73 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Qualification: AEC-Q101 |
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