Технічний опис BUK761R6-40E,118 NEXPERIA
Description: MOSFET N-CH 40V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V, Power Dissipation (Max): 349W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK761R6-40E,118
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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BUK761R6-40E,118 | Виробник : Nexperia |
 Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
товару немає в наявності |
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| BUK761R6-40E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1355A; 349W Mounting: SMD Case: D2PAK; SOT404 Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 349W Polarisation: unipolar Kind of package: reel; tape Gate charge: 145nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1355A Drain-source voltage: 40V Drain current: 120A On-state resistance: 3mΩ кількість в упаковці: 800 шт |
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BUK761R6-40E,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 349W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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BUK761R6-40E,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 349W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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BUK761R6-40E,118 | Виробник : Nexperia |
MOSFETs BUK761R6-40E/SOT404/D2PAK |
товару немає в наявності |
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| BUK761R6-40E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1355A; 349W Mounting: SMD Case: D2PAK; SOT404 Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 349W Polarisation: unipolar Kind of package: reel; tape Gate charge: 145nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1355A Drain-source voltage: 40V Drain current: 120A On-state resistance: 3mΩ |
товару немає в наявності |