BUK6D56-60EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 4A/11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 4A/11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.41 грн |
6000+ | 8.68 грн |
9000+ | 7.81 грн |
30000+ | 7.23 грн |
75000+ | 6.93 грн |
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Технічний опис BUK6D56-60EX Nexperia USA Inc.
Description: MOSFET N-CH 60V 4A/11A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V, Power Dissipation (Max): 2W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK6D56-60EX за ціною від 7.73 грн до 38.87 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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BUK6D56-60EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 4A/11A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 107523 шт: термін постачання 21-31 дні (днів) |
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BUK6D56-60EX | Виробник : Nexperia | MOSFET BUK6D56-60E/SOT1220/SOT1220 |
на замовлення 2992 шт: термін постачання 21-30 дні (днів) |
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BUK6D56-60EX | Виробник : NEXPERIA | Trans MOSFET N-CH 60V 11A Automotive 6-Pin DFN-MD EP |
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BUK6D56-60EX | Виробник : Nexperia | Trans MOSFET N-CH 60V 4A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
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BUK6D56-60EX | Виробник : Nexperia | Trans MOSFET N-CH 60V 4A Automotive AEC-Q101 6-Pin DFN-MD EP T/R |
товар відсутній |
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BUK6D56-60EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220 Mounting: SMD Case: DFN6; SOT1220 Kind of package: reel; tape Application: automotive industry Drain-source voltage: 60V Drain current: 8A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A кількість в упаковці: 1 шт |
товар відсутній |
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BUK6D56-60EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220 Mounting: SMD Case: DFN6; SOT1220 Kind of package: reel; tape Application: automotive industry Drain-source voltage: 60V Drain current: 8A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 44A |
товар відсутній |