BUK6D230-80EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 1.9A/5.1A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 1.9A/5.1A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.88 грн |
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Технічний опис BUK6D230-80EX Nexperia USA Inc.
Description: MOSFET N-CH 80V 1.9A/5.1A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 5.1A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V, Power Dissipation (Max): 2W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції BUK6D230-80EX за ціною від 6.11 грн до 32.06 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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BUK6D230-80EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 1.9A/5.1A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 5.1A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 1.9A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 8537 шт: термін постачання 21-31 дні (днів) |
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BUK6D230-80EX | Виробник : Nexperia | MOSFET BUK6D230-80E/SOT1220/SOT1220 |
на замовлення 14314 шт: термін постачання 21-30 дні (днів) |
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BUK6D230-80EX | Виробник : NEXPERIA | 80 V, N-channel Trench MOSFET |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BUK6D230-80EX | Виробник : Nexperia | 80 V, N-channel Trench MOSFET Automotive AEC-Q101 |
товар відсутній |
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BUK6D230-80EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Pulsed drain current: 20.4A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 575mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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BUK6D230-80EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Pulsed drain current: 20.4A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 575mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |