на замовлення 44915 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.81 грн |
| 10+ | 59.49 грн |
| 100+ | 39.64 грн |
| 500+ | 31.42 грн |
| 1000+ | 25.09 грн |
| 2500+ | 22.7 грн |
| 5000+ | 21.09 грн |
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Технічний опис BSZ0704LSATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 11A/40A TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 14µA, Supplier Device Package: PG-TDSON-8 FL, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V.
Інші пропозиції BSZ0704LSATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BSZ0704LSATMA1 | Виробник : Infineon Technologies |
 SP001614102 |
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BSZ0704LSATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 11A/40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 14µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
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BSZ0704LSATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 11A/40A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 14µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
товар відсутній |