Технічний опис BST72A,112 NXP Semiconductors
Description: MOSFET N-CH 100V 190MA TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V, Power Dissipation (Max): 830mW (Ta), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: TO-92-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.
Інші пропозиції BST72A,112
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BST72A,112 | Виробник : NXP USA Inc. |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 150mA, 5V Power Dissipation (Max): 830mW (Ta) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: TO-92-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
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