BSS84HE3-TP

BSS84HE3-TP Micro Commercial Co


Виробник: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V
Qualification: AEC-Q101
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 150mA, 10V
Power Dissipation (Max): 500mW (Tj)
товару немає в наявності

Відгуки про товар
Написати відгук

Технічний опис BSS84HE3-TP Micro Commercial Co

Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V, Qualification: AEC-Q101, Rds On (Max) @ Id, Vgs: 3.6Ohm @ 150mA, 10V, Power Dissipation (Max): 500mW (Tj).

Інші пропозиції BSS84HE3-TP

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
BSS84HE3-TP BSS84HE3-TP Виробник : Micro Commercial Components (MCC) BSS84HE3_SOT_23_-3370154.pdf MOSFETs
товару немає в наявності