BSS340NWH6327XTSA1

BSS340NWH6327XTSA1 Infineon Technologies


Infineon-BSS340NW-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155fdd81c0d3b6b Виробник: Infineon Technologies
Description: SMALL SIGNAL+N-CH
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 880mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1.6µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 15 V
Qualification: AEC-Q101
на замовлення 15000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1776+12 грн
Мінімальне замовлення: 1776
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Технічний опис BSS340NWH6327XTSA1 Infineon Technologies

Description: SMALL SIGNAL+N-CH, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 880mA (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 880mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1.6µA, Supplier Device Package: PG-TO252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 15 V, Qualification: AEC-Q101.

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BSS340NWH6327XTSA1 BSS340NWH6327XTSA1 Виробник : Infineon Technologies Infineon-BSS340NW-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155fdd81c0d3b6b Description: SMALL SIGNAL+N-CH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 880mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 880mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1.6µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 15 V
Qualification: AEC-Q101
товар відсутній
BSS340NWH6327XTSA1 BSS340NWH6327XTSA1 Виробник : Infineon Technologies Infineon_BSS340NW_DataSheet_v02_01_EN-3360808.pdf MOSFET SMALL SIGNAL+P-CH
товар відсутній