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BSS209PW L6327 Infineon Technologies
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Description: MOSFET P-CH 20V 580MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 550mOhm @ 580mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 89.9 pF @ 15 V
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Технічний опис BSS209PW L6327 Infineon Technologies
Description: MOSFET P-CH 20V 580MA SOT323-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 580mA (Ta), Rds On (Max) @ Id, Vgs: 550mOhm @ 580mA, 4.5V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 3.5µA, Supplier Device Package: PG-SOT323, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.38 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 89.9 pF @ 15 V.
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BSS209PW L6327 | Виробник : Infineon Technologies |
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